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Guangxu Ju
Physics
Peking University
Beijing
Language: Chinese, English, Japanese
Contact
X-Ray Real-Time In Situ Characterization Gan Semiconductor Epitaxial Growth Ingan Strain Relaxation Dislocation
Areas of Focus
  • Advanced X-ray real-time in situ characterization techniques
  • GaN-based semiconductor epitaxial growth dynamics
  • InGaN epitaxial growth mechanisms
  • Strain relaxation processes
  • Dislocation mechanisms in heterostructures
Work Experience
  • 2012.10 - 2014.4 Researcher, Nagoya University
  • 2014.4 - 2018.4 Postdoctoral Researcher, Argonne National Laboratory, USA
  • 2018.4 - 2019.5 Research Assistant Professor, Arizona State University
Academic Background & Achievements
  • 2009.9 - 2012.9 PhD in Engineering, Nagoya University
  • Selected for the National Young Talents Program
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