Zeng Fei
zengfei@tsinghua.edu.cn
Chinese, English
Beijing
Tsinghua University
Materials Science and Engineering
  • 2002 Doctorate in Material Physics and Chemistry, Tsinghua University
  • 1994 Master's in Material Physics, Shanghai Institute of Microsystems and Information Technology, Chinese Academy of Sciences
  • 1991 Bachelor's in Semiconductor Physics and Devices, Huazhong University of Science and Technology
  • Published over 200 SCI papers, Cited over 5000 times, H-index 43
  • Holds 26 national invention patents
  • 2002-Present, Tsinghua University, Department of Materials Science
  • 1996-1999, Lecturer, Central South University, Department of Materials
  • Second National Prize for Natural Sciences (Second Place)
  • Second National Prize for Technological Invention (Third Place)
  • Second National Prize for Scientific and Technological Progress (Sixth Place)
  • 2009 Ministry of Education New Century Talent Support Plan
Functional thin film materials interface effects
Storage, memory and learning effects
Material doping technology and physicochemical properties
  • Emulation of auditory senses depending on chaotic dynamics of threshold switching memristor, Yu, JW; Zeng, F; Wan, Q; et al., 2023
  • Local Activity in a Self-Assembled Quantum Dot System, Wan, Q; Zeng, F; Yu, JW; et al., 2023
  • Memristive structure of Nb/HfOx/Pd with controllable switching mechanisms to perform featured actions in neuromorphic networks, Yu, JW; Zeng, F; Wan, Q; et al., 2022
  • Memristive Behaviors Dominated by Reversible Nucleation Dynamics of Phase-Change Nanoclusters, Wan, Q; Zeng, F; Sun, YM; et al., 2022
  • Phase-change Nano-clusters Embedded Memristor for Simulating Synaptic Learning, Wan, Q; Zeng, F; Yin, J; et al., 2019
  • Adaptive Crystallite Kinetics in Homogenous Bilayer Oxide Memristor for Emulating Diverse Synaptic Plasticity, Yin, J; Zeng, F; Wan, Q; et al., 2018
  • Diverse Synaptic Plasticity Induced by Interplay of Ionic Polarization and Doping at Salt-Doped Electrolyte/Semiconducting Polymer Interface, Hu, YD; Zeng, F; Chang, CT; et al., 2017
  • Spatial summation of the short-term plasticity of a pair of organic heterogeneous junctions, Chang, CT; Zeng, F; Li, JX; et al., 2017
  • Simulation of synaptic short-term plasticity using Ba(CF3SO3)2-doped polyethylene oxide electrolyte film, Chang, CT; Zeng, F; Li, XJ; et al., 2016
  • Frequency-dependent learning achieved using semiconducting polymer/electrolyte composite cells, Dong, WS; Zeng, F; Lu, SH; et al., 2015
  • Programmable complementary resistive switching behaviours of a plasma-oxidised titanium oxide nanolayer, Tang, GS; Zeng, F; Chen, C; et al., 2013
  • forming-free and self-rectifying resistive switching of the simple Pt/TaOx/n-Si structure for access device-free high-density memory application, Gao, S; Zeng, F; Li, F; et al., 2015
  • Synaptic plasticity and learning behaviours mimicked through Ag interface movement in an Ag/conducting polymer/Ta memristive system, Li, SZ; Zeng, F; Chen, C; et al., 2013
  • Resistive switching induced by metallic filaments formation through poly (3, 4-ethylene-dioxythiophene): poly (styrenesulfonate), Wang, ZS; Zeng, F; Yang, J; et al., 2012
  • Learning processes modulated by the interface effects in a Ti/conducting polymer/Ti resistive switching cell, Zeng, F; Li, SZ; Yang, J; et al., 2014
  • Frequency Selectivity in Pulse Responses of Pt/Poly(3-Hexylthiophene-2,5-Diyl)/Polyethylene Oxide + Li+/Pt Hetero-Junction, Zeng, F; Lu, SH; Li, SZ; et al., 2014
  • Reproducible and controllable organic resistive memory based on Al/poly(3,4-ethylene-dioxythiophene):poly(styrenesulfonate)/Al structure, Wang, ZS; Zeng, F; Yang, J; et al., 2010
  • Conductance quantization in oxygen-anion-migration-based resistive switching memory devices, Chen, C; Gao, S; Zeng, F; et al., 2013
  • Implementation of Complete Boolean Logic Functions in Single Complementary Resistive Switch, Gao, S; Zeng, F; Wang, MJ; et al., 2015
Thin Films Interface Storage Memory Learning Doping Materials Science Physicochemical Technology Effects

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